1200V CoolSiC Diodes Boost EV DC Charging Efficiency and Other Industrial Applications

Infineon Technologies extends the CoolSiC Schottky 1200V G5 diode portfolio with the release of a TO247-2 package which replaces silicon diodes for higher efficiency. For extra safety in high-pollution environments, creepage and clearance distances expanded up to just 8.7mm.

Diode offers forward currents up to 40A ideal for EV DC charging, uninterruptible power supply (UPS), solar energy systems and other industrial applications. If used in combination with silicon IGBT or super-junction MOSFET, the diode can significantly raises efficiency up to one percent when combination with silicon IGBT or super-junction MOSFET than compared to when a silicon diode is used.

The CoolSiC Schottky 1200V G5 diode with a 10A rating can serve as a drop-in replacement for a 30A silicon diode because of its superior efficiency. The diode also features negligible reverse recovery losses with best-in-class forward voltage (V F) as well as the slightest increase of VF with temperature and highest surge current capability.

CoolSiC™ Schottky 1200V G5 diode portfolio in a TO247-2 pin package can be ordered now in five current classes: 10A / 15A / 20A / 30A / 40A. Visit for more info CoolSiC™ Schottky 1200V G5 diode.



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